Siloxane resins

ABSTRACT

This invention pertains to a siloxane resin composition comprising R 1 SiO 3/2  siloxane units, R 2 SiO 3/2  siloxane units and (R 3 O) b SiO (4-b)/2  siloxane units wherein R 1  is an alkyl group having 1 to 5 carbons, hydrogen, or mixtures thereof; R 2  is a monovalent organic group having 6 to 30 carbons; R 3  is a branched alkyl group having 3 to 30 carbons, b is from 1 to 3; and the siloxane resin contains from 2.5 to 85 mole percent R 1 SiO 3/2  units, 2.5 to 50 mole percent R 2 SiO 3/2  units and 5 to 95 mole percent (R 3 O) b SiO (4-b)/2  units. The siloxane resin is useful to make insoluble porous resin and insoluble porous coatings. Heating a substrate coated with the siloxane resin at a sufficient temperature effects removal of the R 2  and R 3 O groups to form an insoluble insoluble porous coating having a porosity of 1 to 60 volume percent and a dielectric constant in the range of 1.5 to 3.0.

This application is a continuation-in-part of 09/915,899, filed Jul. 26,2001, now abandoned.

FIELD OF THE INVENTION

This invention pertains to a siloxane resin composition comprisingR¹SiO_(3/2) siloxane units, R²SiO_(3/2) siloxane units and(R³O)_(b)SiO_((4-b)/2) siloxane units wherein R¹ is independentlyselected from the group consisting of alkyl having 1 to 5 carbon atoms,hydrogen, and mixtures thereof; R² is independently selected from thegroup consisting of monovalent organic groups having 6 to 30 carbonatoms and monovalent substituted organic groups having 6 to 30 carbonatoms; R³ is independently selected from the group consisting ofbranched alkyl groups having 3 to 30 carbon atoms and branchedsubstituted alkyl groups having 3 to 30 carbon atoms, and b is from 1 to3. This invention further pertains to insoluble porous resins andinsoluble porous coatings produced from the siloxane resin composition.

BACKGROUND OF THE INVENTION

Semiconductor devices often have one or more arrays of patternedinterconnect levels that serve to electrically couple the individualcircuit elements forming an integrated circuit (IC). The interconnectlevels are typically separated by an insulating or dielectric coating.Previously, a silicon oxide coating formed using chemical vapordeposition (CVD) or plasma enhanced techniques (PECVD) was the mostcommonly used material for such dielectric coatings. However, as thesize of circuit elements and the spaces between such elements decreases,the relatively high dielectric constant of such silicon oxide coatings(i.e. about 4) is inadequate to provide adequate electrical insulation.

In order to provide a lower dielectric constant than that of siliconoxide, dielectric coatings formed from siloxane-based resins have founduse. An example of such coatings are those formed from hydrogensilsesquioxane resins as described for example in Collins et al., U.S.Pat. No. 3,615,272 and Haluska et al. U.S. Pat. No. 4,756,977. Whilesuch coatings provide lower dielectric constants than CVD or PECVDsilicon oxide coatings and also provide other benefits such as enhancedgap filling and surface planarization, typically the dielectricconstants of such coatings are limited to approximately 3 or greater.

It is well known that the dielectric constant of insulating coatings isan important factor where IC's with low power consumption, cross talk,and signal delay are required. As IC dimensions continue to shrink, thisfactor increases in importance. As a result, siloxane based resinmaterials and methods for making such materials that can provideelectrically insulating coatings with dielectric constants below 3 aredesirable. In addition it is desirable to have siloxane-based resins andmethods for making such resins that provide coatings which have a highresistance to cracking. Also, it is desirable for such siloxane-basedresins to provide coatings by standard processing techniques such asspin coating. It is known that the dielectric constant of solid coatingsdecrease with a decrease in density of the coating material. A porouscoating typically has a lower density than a corresponding solidcoating.

Haluska, U.S. Pat. No. 5,446,088 describes a method of co-hydrolyzingsilanes of the formulas HSi(OR)₃ and Si(OR)₄ to form co-hydrolysatesuseful in the formation of coatings. The R group is an organic groupcontaining 1-20 carbon atoms, which when bonded to silicon through theoxygen atom, forms a hydrolyzable substituent. Especially preferredhydrolyzable groups are methoxy and ethoxy. The hydrolysis with water iscarried out in an acidified oxygen containing polar solvent. Theco-hydrolyzates in a solvent are applied to a substrate, the solventevaporated and the coating heated to 50 to 1000° C. to convert thecoating to silica. Haluska does not disclose silanes having branchedalkoxy groups.

Chung et al., U.S. Pat. No. 6,231,989 describe a method for forming aporous coating from hydrogen silsesquioxane resins. A porous network isformed by depositing a coating on a substrate with a solution comprisinga hydrogen silsesquioxane resin and a solvent in a manner in which atleast 5 volume % of the solvent remains in the coating after deposition.The coating is then exposed to an environment comprising a basiccatalyst and water; the solvent is evaporated from the coating to form aporous network with a dielectric constant in the range of 1.5 to 2.4.

Smith et al., WO 98/49721, describe a process for forming a nanoporousdielectric coating on a substrate. The process comprises the steps ofblending an alkoxysilane with a solvent composition and optional water;depositing the mixture onto a substrate while evaporating at least aportion of the solvent; placing the substrate in a sealed chamber andevacuating the chamber to a pressure below atmospheric pressure;exposing the substrate to water vapor at a pressure below atmosphericpressure and then exposing the substrate to base vapor.

Mikoshiba et al., U.S. Pat. No. 6,022,814, describe a process forforming silicon oxide films on a substrate from hydrogen or methylsiloxane-based resins having organic substituents that are removed at atemperature ranging from 250° C. to the glass transition point of theresin. Silicon oxide film properties reported include a density of 0.8to 1.4 g/cm³, an average pore diameter of 1 to 3 nm, a surface area of600 to 1,500 m²/g and a dielectric constant in the range of 2.0 to 3.0.The useful organic substituents that can be oxidized at a temperature of250° C. or higher that were disclosed include substituted andunsubstituted alkyl or alkoxy groups exemplified by3,3,3-triflouropropyl, β-phenethyl group, t-butyl group, 2-cyanoethylgroup, benzyl group, and vinyl group.

Mikoskiba et al., J. Mat. Chem., 1999, 9, 591-598, report a method tofabricate angstrom size pores in methylsilsesquioxane coatings in orderto decrease the density and the dielectric constant of the coatings.Copolymers bearing methyl (trisiloxysilyl) units and alkyl(trisiloxysilyl) units were spin-coated on to a substrate and heated at250° C. to provide rigid siloxane matrices. The coatings were thenheated at 450° C. to 500° C. to remove thermally labile groups and holeswere left corresponding to the size of the substituents, having adielectric constant of about 2.3. Trifluoropropyl, cyanoethyl,phenylethyl, and propyl groups were investigated as the thermally labilesubstituents.

Ito et al., Japanese Laid-Open Patent (HEI) 5-333553, describepreparation of a siloxane resin containing alkoxy and silanolfunctionality by the hydrolysis of diacetoxydi(tertiarybutoxy)silane inthe presence of a proton acceptor. The resin is radiation cured in thepresence of a photo acid with subsequent thermal processing to form anSiO₂ like coating and can be used as a photo resist material for ICfabrication.

It has now been found that incorporation of organic groups having 6 to30 carbon atoms and branched alkoxy groups having 3 to 30 carbon atomsinto siloxane resins provides several advantages such as improvedstorage stability, increased modulus and increased porosity of the curedresins, while retaining a dielectric constant in the range of 1.5 to3.0. It is therefore an object of this invention to show a siloxaneresin composition having improved storage stability. It is also anobject of this invention to show a method for making siloxane resins anda method for curing these resins to produce insoluble porous coatingshaving a dielectric constant of 1.5 to 3.0, a porosity from 1 to 60volume percent and a modulus from 1.0 to 10 GPa. These coatings have theadvantage that they may be formed using conventional thin filmprocessing.

SUMMARY OF THE INVENTION

This invention pertains to a siloxane resin composition comprising:

(A) 2.5 to 85 mole parts of R¹SiO_(3/2) siloxane units wherein R¹ isindependently selected from the group consisting of alkyl having 1 to 5carbon atoms, hydrogen, and mixtures thereof;

(B) 2.5 to 50 mole parts of R²SiO_(3/2) siloxane units wherein R² isindependently selected from the group consisting of monovalent organicgroups having 6 to 30 carbon atoms and monovalent substituted organicgroups having 6 to 30 carbon atoms; and

(C) 5 to 95 mole parts of (R³O)_(b)SiO_((4-b)/2) siloxane units, whereinR³ is independently selected from the group consisting of branched alkylgroups having 3 to 30 carbon atoms and branched substituted alkyl groupshaving 3 to 30 carbon atoms, b is from 1 to 3. The total amount ofcomponents (A), (B) and (C) is 100 mole parts and the sum of components(A), (B) and (C) is at least 50 percent of the total siloxane units inthe resin composition.

This invention also pertains to a method for making siloxane resins byreacting a silane or a mixture of silanes of the formula R¹SiX₃, asilane or a mixture of silanes of the formula R²SiX₃, and a silane or amixture of silanes of the formula (R³O)_(c)SiX_((4-c)) where R¹ isindependently selected from the group consisting of alkyl groups having1 to 5 carbon atoms, hydrogen, and mixtures thereof; R² is independentlyselected from the group consisting of monovalent organic groups having 6to 30 carbon atoms and substituted monovalent organic groups having 6 to30 carbon atoms; R³ is independently selected from the group consistingof branched alkyl groups and substituted branched alkyl groups having 3to 30 carbon atoms; c is from 1 to 3 and X is a hydrolyzable group or ahydroxy group.

This invention further pertains to a method of forming a an insolubleporous resin and to a method of forming an insoluble porous coating on asubstrate. The insoluble porous coatings have a dielectric constant inthe range of 1.5 to 3.0, a porosity of 1 to 60 volume percent and amodulus in the range of 1.0 to 10 GPa.

DETAILED DESCRIPTION OF THE INVENTION

The siloxane resin composition comprises:

(A) 2.5 to 85 mole parts of R¹SiO_(3/2) siloxane units wherein R¹ isindependently selected from the group consisting of alkyl having 1 to 5carbon atoms, hydrogen, and mixtures thereof;

(B) 2.5 to 50 mole parts of R²SiO_(3/2) siloxane units wherein R² isindependently selected from the group consisting of monovalent organicgroups having 6 to 30 carbon atoms and monovalent substituted organicgroups having 6 to 30 carbon atoms; and

(C) 5 to 95 mole parts of (R³O)_(b)SiO_((4-b)/2) siloxane units, whereinR³ is independently selected from the group consisting of branched alkylgroups having 3 to 30 carbon atoms and branched substituted alkyl groupshaving 3 to 30 carbon atoms, b is from 1 to 3. The total amount ofcomponents (A), (B) and (C) is 100 mole parts and the sum of components(A), (B) and (C) is at least 50 percent of the total siloxane units inthe resin composition. It is preferred that the siloxane resin containsan average of 30 to 60 mole parts component (A), 10 to 25 mole partscomponent (B) and 20 to 50 mole parts (C) where the total amount ofcomponents (A), (B) and (C) combined is 100 mole parts and the sum of(A), (B) and (C) is at least 70 percent of the total siloxane units inthe resin composition.

The structure of the siloxane resin is not specifically limited. Thesiloxane resins may be essentially fully condensed or may be onlypartially reacted (i.e., containing less than 10 mole % Si—OR and/orless than 30 mole % Si—OH). The partially reacted siloxane resins may beexemplified by, but not limited to, siloxane units such asR¹Si(X)_(d)O_((3-d/2)); R²Si(X)_(d)O_((3-d/2)); andSi(X)_(d)(OR³)_(f)O_((4-d-f/2)); in which R¹, R², and R³ are definedabove; each X is independently a hydrolyzable group or a hydroxy group,and d and f are from 1 to 2. The hydrolyzable group is an organic groupattached to a silicon atom through an oxygen atom (Si—OR) forming asilicon bonded alkoxy group or a silicon bonded acyloxy group. R isexemplified by, but not limited to, linear alkyl groups having 1 to 6carbon atoms such as methyl, ethyl, propyl, butyl, pentyl, or hexyl andacyl groups having 1 to 6 carbon atoms such as formyl, acetyl,propionyl, butyryl, valeryl or hexanoyl. The siloxane resin may alsocontain less than about 10 mole percent SiO_(4/2) units.

The siloxane resins have a weight average molecular weight in a range of400 to 160,000 and preferably in a range of 5,000 to 100,000.

R¹ can be a linear alkyl group having 1 to 5 carbon atoms, hydrogen andmixtures thereof. The alkyl group is exemplified by, but not limited to,methyl, ethyl, propyl, butyl, and pentyl. It is preferred that R¹ ismethyl, hydrogen or mixtures thereof.

R² can be a substituted or unsubstituted linear, branched or cyclicmonovalent organic group having 6 to 30 carbon atoms. The substitutedorganic group can be substituted with substituents in place of a carbonbonded hydrogen atom (C—H). Substituted R² groups are exemplified by,but not limited to, halogen such as chlorine or fluorine, ether,poly(oxyalkylene) groups described by formulaCH₃O(CH₂)_(m)O)_(p)(CH₂)_(q)— where m, p and q are positive integers andpreferably a positive integer of 1 to 9, alkoxy, acyloxy, acyl,alkoxycarbonyl and trialkylsiloxy groups. Examples of R² include, butare not limited to, hexyl, heptyl, octyl, nonyl, decyl, dodecyl,hexadecyl, triisobutyl, tetraisobutyl, trimethylsiloxyhexadecyl,octadecyl, CH₃(CH₂)₁₁OCH₂CH₂—, CH₃O(CH₂CH₂O)₇₋₉(CH₂)₃—,(CH₃)₃CCH₂(CH₃)₂C(CH₃)₃CCH₂CHCH₂—, CF₃(CF₂)₅CH₂CH₂—, phenylethyl,p-methylphenylethyl, p-methoxyphenylethyl, and p-bromophenylethyl. R² ispreferably a substituted or unsubstituted alkyl group having 10 to 20carbon atoms.

R³ is a substituted or unsubstituted branched alkyl group having 3 to 30carbon atoms. The substituted branched alkyl group can be substitutedwith substituents in place of a carbon bonded hydrogen atom (C—H).Substituted R² groups are exemplified by, but not limited to, halogensuch as chlorine and fluorine, alkoxycarbonyl such as described byformula —(CH₂)_(a)C(O)O(CH₂)_(b)CH₃, alkoxy substitution such asdescribed by formula —(CH₂)_(a)O(CH₂)_(b)CH₃, and carbonyl substitutionsuch as described by formula —(CH₂)_(a)C(O)(CH₂)_(b)CH₃, where a≧0 andb≧0. Unsubstituted R³ groups are exemplified by, but not limited to,isopropyl, isobutyl, sec-butyl, tert-butyl, isopentyl, neopentyl,tert-pentyl, 2-methylbutyl, 2-methylpentyl, 2-methylhexyl, 2-ethylbutyl,2-ethylpentyl, 2-ethylhexyl, etc. Preferably R³ is a tertiary alkylhaving 4 to 18 carbon atoms and more preferably R³ is t-butyl.

The method for preparing the siloxane resin comprises:

combining

(a) a silane or a mixture of silanes of the formula R¹SiX₃, where eachR¹ is independently selected from the group consisting of alkyl having 1to 5 carbon atoms, hydrogen and mixtures thereof, X is independently ahydrolyzable group or a hydroxy group;

(b) a silane or a mixture of silanes of the formula R²SiX₃, where R² isindependently selected from the group consisting of monovalent organicgroups having 6 to 30 carbon atoms and substituted monovalent organicgroups having 6 to 30 carbon atoms, X is independently a hydrolyzablegroup or a hydroxy group;

(c) a silane or a mixture of silanes of the formula(R³O)_(c)SiX_((4-c)), where R³ is independently selected from the groupconsisting of branched alkyl groups having 3 to 30 carbon atoms andbranched substituted alkyl groups having 3 to 30 carbon atoms, c is from1 to 3 inclusive, X is independently a hydrolyzable group or a hydroxygroup; and

(d) water,

for a time and temperature sufficient to effect the formation of thesiloxane resin.

Silane (a) is a silane or a mixture of silanes oft he formula R¹SiX₃,where each R¹ is independently selected from the group consisting ofalkyl having 1 to 5 carbon atoms described above, hydrogen and mixturesthereof. It is preferred that R¹ is methyl, hydrogen or mixturesthereof. X is a hydrolyzable group or a hydroxy group. By “hydrolyzablegroup” it is meant that greater than 80 mole percent of X reacts withwater (hydrolyzes) under the conditions of the reaction to effectformation of the siloxane resin. The hydroxy group is a condensablegroup in which at least 70 mole percent reacts with another X groupbonded to a different silicon atom to condense and form a siloxane bond(Si—O—Si). The hydrolyzable group is a halide group such as chloride, anamino group, or an organic group attached to a silicon atom through anoxygen atom (Si—OR) forming a silicon bonded alkoxy group or a siliconbonded acyloxy group. When X is an amino group, it is generally limitedto compositions where R¹ is alkyl or contains less than 10 mole percenthydrogen, since amino may be detrimental to the stability of hydrogencontaining siloxane resins. Also, when X is amino, it is typically usedat less than about 30 mole percent because the resulting siloxane resinmay contain greater than 30 mole percent SiOH. R is exemplified by, butnot limited to, linear alkyl groups having 1 to 6 carbon atoms such asmethyl, ethyl, propyl, butyl, pentyl, or hexyl and acyl groups having 1to 6 carbon atoms such as formyl, acetyl, propionyl, butyryl, valeryl orhexanoyl. It is preferred that silane (a) be trichlorosilane,methyltrichlorsilane, trimethoxysilane, triethoxysilane,methyltrimethoxysilane or methyltriethoxysilane because of their easyavailability. Typically, silane (a) is present in an amount from 2.5 to85 mole parts per 100 mole parts total of silane (a), silane (b) andsilane (c) combined and preferably 30 to 60 mole parts on the samebasis.

Silane (b) is a silane or a mixture of silanes of the formula R²SiX₃,where R² is independently selected from the group consisting ofmonovalent organic groups having 6 to 30 carbon atoms and substitutedmonovalent organic groups having 6 to 30 carbon atoms as describedabove. X is independently a hydrolyzable group or a hydroxy group asdescribed above. It is preferred that silane (b) be R²SiCl₃, R²Si(OMe)₃and R²Si(OEt)₃ where Me stands for methyl and Et stands for ethylbecause of their easy availability. Typically, silane (b) is present inan amount from 2.5 to 50 mole parts per 100 mole parts total of silane(a), silane (b) and silane (c) combined and preferably 10 to 25 moleparts on the same basis.

Silane (c) is a silane or a mixture of silanes of the formula(R³O)_(c)SiX_((4-c)), where R³ is independently selected from the groupconsisting of branched alkyl groups having 3 to 30 carbon atoms andsubstituted branched alkyl groups having 3 to 30 carbon atoms asdescribed above, c is from 1 to 3, and X is independently a hydrolyzablegroup or a hydroxy group as described above. It is preferred that silane(c) be di-t-butoxydichlorosilane, di-t-butoxydihydroxysilane,di-t-butoxydimethoxysilane, di-t-butoxydiethoxysilane, anddi-t-butoxydiacetoxysilane because of their easy availability.Typically, silane (c) is present in an amount from 5 to 95 mole partsper 100 mole parts total of silane (a), silane (b) and silane (c)combined and preferably 20 to 50 mole parts on the same basis.

Water is present in an amount to effect hydrolysis of the hydrolyzablegroup, X. Typically water is present in an amount of 0.5 to 2.0 moles ofwater per mole of X in silanes (a), (b) and (c) and more preferably 0.8to 1.2 moles on the same basis.

The reaction to effect formation of the siloxane resin can be carriedout in the liquid state with or without a solvent. If a solvent is used,it can include any suitable organic solvent that does not containfunctional groups which may participate in the reaction and is a solventfor silanes (a), (b) and (c). The solvent is exemplified by, but notlimited to, saturated aliphatics such as n-pentane, hexane, n-heptane,isooctane and dodecane; cycloaliphatics such as cyclopentane andcyclohexane; aromatics such as benzene, toluene, xylene and mesitylene;cyclic ethers such as tetrahydrofuran (THF) and dioxane; ketones such asmethylisobutyl ketone (MIBK); halogen substituted alkanes such astrichloroethane; halogenated aromatics such as bromobenzene andchlorobenzene; and alcohols such as methanol, ethanol, propanol,butanol. Additionally, the above solvents may be used in combination oftwo or more as co solvents. Preferred solvents are aromatic compoundsand cyclic ethers, with toluene, mesitylene and tetrahydrofuran beingmost preferred. When a solvent is used, it is generally used within arange of 40 to 95 weight percent solvent based on the total weight ofsolvent and silanes (a), (b) and (c). More preferred is 70 to 90 weightpercent solvent on the same basis.

Combining components (a), (b), (c), (d) and optionally a solvent (if itis used) may be done in any order as long as there is contact betweenany hydrolyzable groups (X) and water, so that the reaction proceed toeffect formation of the siloxane resin. Generally the silanes aredissolved in the solvent and then the water is added to the solution.Some reaction usually occurs when the above components are combined. Toincrease the rate and extent of reaction, however, various facilitatingmeasures such as temperature control and/or agitation are utilized.

The temperature at which the reaction is carried out is not critical aslong as it does not cause significant gelation or cause curing of thesiloxane resin product. Generally the temperature can be in a range of20° C. to 150° C., with a temperature of 20° C. to 100° C. beingpreferred. When X is an acyloxy group such as acetoxy, it is preferredto conduct the reaction at or below 50° C. The time to form the siloxaneresin is dependent upon a number of factors such as, but not limited to,the specific silanes being used, the temperature and the mole ratio ofR¹, R² and R³ desired in the siloxane resin product of the reaction.Typically, the reaction time is from several minutes to several hours.To increase the molecular weight of the siloxane resin prepared and toimprove the storage stability of the siloxane resin it is preferred tocarry out a bodying step subsequent to or as part of the above reaction.By “bodying” it is meant that the reaction is carried out over severalhours with heating from 40° C. up to the reflux temperature of thesolvent to effect the increase in weight average molecular weight. It ispreferred that the reaction mixture be heated such that the siloxaneresin after heating has a weight average molecular weight in the rangeof about 5,000 to 100,000.

When X is an acyloxy group such as acetoxy, the corresponding acid suchas acetic acid is produced as a by-product of the reaction. Since thepresence of acetic acid may adversely affect the stability of thesiloxane resin product, it is desirable that any acetic acid beneutralized. Neutralization of the by-product acetic acid may beeffected by contacting the reaction mixture with a neutralizing agent orby removal via distillation. The distillation is generally accomplishedby the addition of solvent such as toluene (if it is not alreadypresent) and removing the acetic acid under reduced pressure and heat(i.e. up to 50° C.) as an azeotrope with the solvent. If a neutralizingagent is used, it must be sufficiently basic to neutralize any remainingacetic acid and yet insufficiently basic so that it does not catalyzerearrangement of the siloxane resin product. Examples of suitable basesinclude calcium carbonate, sodium carbonate, sodium bicarbonate,ammonium carbonate, ammonia, calcium oxide or calcium hydroxide.Neutralization may be accomplished by any suitable means such asstirring in a powdered neutralizing agent followed by filtration or bypassing the reaction mixture and any additional solvent over or througha bed of particulate neutralizing agent of a size which does not impedeflow. The bodying step described herein above, is generally carried outafter neutralization and/or removal of the by-product acetic acid.

When X is a halide group HX is formed as a by-product of the reaction.Since the presence of HX may adversely affect the stability of thesiloxane resin product, it is desirable that the HX be neutralized orremoved using methods known in the art for neutralization or removal.For example, when HCl is produced as a by-product it may be removed byproviding a gas sweep in the reaction vessel. Or the HCl may beneutralized using the process described above. Or the HCl may be removedby washing the siloxane resin solution with water until neutral.

When sufficint HX is formed (i.e. when silanes (a), (b) and (c) allcontain X where X is a halide group) it is possible that all of the ORgroups in silane (c) will be removed during the formation of thesiloxane resin resulting in a siloxane resin composition comprising (A)and (B) siloxane units and additionally SiO_(4/2) units.

The siloxane resin may be recovered in solid form by removing thesolvent if a solvent was used. The method of solvent removal is notcritical and numerous approaches are well known in the art. For example,a process comprising removing the solvent by distillation under vacuumand heat (i.e. 50° C. to 120° C.) may be used. Alternatively, if it isdesired to have the siloxane resin in a particular solvent, a solventexchange may be done by adding a secondary solvent and distilling offthe first solvent. Siloxane resins containing greater than 10 weightpercent silicon bonded hydrogen (Si—H) are generally kept as solutions,while those with less Si—H may be stored in solid form.

An insoluble porous resin may be obtained by heating the siloxane resinfor a time and temperature sufficient to effect curing of the siloxaneresin and removal of the R² and R³O groups, thereby forming an insolubleporous resin. By “removal” it is meant that greater than about 80 molepercent of the R² and R³O groups bonded to silicon atoms have beenremoved as volatile hydrocarbon and hydrocarbon fragments which generatevoids in the coating, resulting in the formation of an insoluble porousresin. The heating may be conducted in a single-step process or in atwo-step process. In the two-step heating process the siloxane resin isfirst heated for a time and temperature sufficient to effect curingwithout significant removal of the R² and R³O groups. Generally thistemperature can be in a range of from greater than 20° C. to 350° C. forseveral minutes to several hours. Then the cured siloxane resin isfurther heated for a time and temperature (for several minutes toseveral hours) within a range of greater than 350° C. up to the lesserof the decomposition of the siloxane resin backbone or R¹ groups bondedto silicon atoms described herein above to effect removal of the R² andR³O groups from the silicon atoms. Typically, the removal step isconducted at a temperature in a range of greater than 350° C. to 600°C., with a temperature range of 400° C. to 550° C. being preferred .During the curing and heating step, greater than 90 moles percent of thealkyl containing R¹ groups remain on the siloxane resin and greater than70 mole percent of the hydrogen containing R¹ groups remain on thesiloxane resin. The porosity in the final insoluble porous resin can becontrolled by the mole percent of R² and R³O groups in the siloxaneresin and how the siloxane resin is heated. The insoluble porous resinsformed from siloxane resins containing both R² and R³O groupsincorporated into the siloxane resin generally result in an increase inporosity, typically about 10 volume percent, when compared with siloxaneresins cured under similar conditions which contain only R² or R³Ogroups incorporated into the siloxane resin of similar compositions(i.e. the mol % of total R² or R³O leaving groups is approximately thesame).

In the single-step process the curing of the siloxane resin and removalof the R² and R³O groups are effected simultaneously by heating for atime and temperature within a range of greater than 20° C. up to thelesser of the decomposition of the siloxane resin backbone or the R¹groups bonded to silicon atoms described herein above to effect removalof the R² and R³O groups from the cured siloxane resin. Generally, it ispreferred that the curing/removal step be conducted at a temperature ina range of greater than 350° C. to 600° C., with a temperature in arange of 400° C. to 550° C. being most preferred.

It is preferred that the heating takes place in an inert atmosphere,although other atmospheres may be used. Inert atmospheres useful hereininclude, but are not limited to, nitrogen, helium and argon with anoxygen level less than 50 parts per million and preferably less than 15parts per million. Heating may also be conducted at any effectiveatmospheric pressure from vacuum to above atmospheric and under anyeffective oxidizing or non-oxidizing gaseous environment such as thosecomprising air, O₂, oxygen plasma, ozone, ammonia, amines, moisture,N₂O, hydrogen, etc.

The insoluble porous resins may be useful as porous materials withcontrollable porosity and high temperature stability up to 600° C. suchas shape selective gas or liquid permeable membranes, catalyst supports,energy storage systems such as batteries and molecular separation andisolation. By the term “porous” it is meant an insoluble porous resinhaving a porosity in a range of from 1 to 60 volume percent. Porosity inthe range of 10 to 60 volume percent is preferred. The modulus of theinsoluble porous resins ranges from 1.0 to 10 GPa.

The siloxane resins may be used to prepare a porous coating on asubstrate by:

(A) coating the substrate with a coating composition comprising asiloxane resin composition having

(a) 2.5 to 85 mole parts of R¹SiO_(3/2) siloxane units wherein R¹ isselected from the group consisting of alkyl having 1 to 5 carbon atoms,hydrogen, and mixtures thereof,

(b) 2.5 to 50 mole parts of R²SiO_(3/2) siloxane units wherein R² isselected from the group consisting of monovalent organic groups having 6to 30 carbon atoms and monovalent substituted organic groups having 6 to30 carbon atoms as described herein above, and

(c) 5 to 95 mole parts of (R³O)_(b)SiO_((4-b)/2) siloxane units, whereinR³ is selected from the group consisting of branched alkyl groups having3 to 30 carbon and branched substituted alkyl groups having 3 to 30carbon atoms as described herein above, b is 1 to 3, the total amount ofcomponents (a), (b) and (c) combined is 100 mole parts and the sum of(a), (b) and (c) is at least 50 percent of total siloxane units in theresin composition;

(B) heating the coated substrate to a temperature sufficient to effectcuring of the coating composition, and

(C) further heating the coated substrate to a temperature sufficient toeffect removal of the R² and R³O groups from the cured coatingcomposition, thereby forming an insoluble porous coating on thesubstrate. It is preferred that the siloxane resin contains an averageof 30 to 60 mole parts (a), 10 to 25 mole parts (b) and 20 to 50 mole(c) per 100 mole parts total amount of (a), (b) and (c) and the sum of(a), (b) and (c) is at least 70 percent of total siloxane units in theresin composition.

The siloxane resin is typically applied to a substrate as a solventdispersion. Solvents which may be used include any agent or mixture ofagents which will dissolve or disperse the siloxane resin to form ahomogeneous liquid mixture without affecting the resulting coating orthe substrate. The solvent can generally be any organic solvent thatdoes not contain functional groups which may participate in a reactionwith the siloxane resin, such as hydroxyl, exemplified by thosediscussed herein above for the reaction of the silane mixture withwater.

The solvent is present in an amount sufficient to dissolve the siloxaneresin to the concentration desired for a particular application.Typically the solvent is present in an amount of 40 to 95 weightpercent, preferably from 70 to 90 weight percent based on the weight ofthe siloxane resin and solvent. If the siloxane resin has been retainedin a solvent described herein above, the solvent may be used in coatingthe substrate, or if desired a simple solvent exchange may be performedby adding a secondary solvent and distilling off the first solvent.

Specific methods for application of the siloxane resin to a substrateinclude, but are not limited to spin coating, dip coating, spraycoating, flow coating, screen printing or others. The preferred methodfor application is spin coating. When a solvent is used, the solvent isallowed to evaporate from the coated substrate resulting in thedeposition of the siloxane resin coating on the substrate. Any suitablemeans for evaporation may be used such as simple air drying by exposureto an ambient environment, by the application of a vacuum, or mild heat(up to 50° C.) or during the early stages of the curing process. Whenspin coating is used, the additional drying method is minimized sincethe spinning drives off the solvent.

Following application to the substrate, the siloxane resin coating isheated at a temperature sufficient to effect cure of the siloxane resinand removal of the R² and R³O groups bonded to silicon atoms, therebyforming an insoluble porous coating. By “cured coating composition” itis meant that the coating is essentially insoluble in the solvent fromwhich the siloxane resin was deposited onto the substrate or any solventdelineated above as being useful for the application of the siloxaneresin. By “removal” it is meant that greater than 80 mole percent of theR² and R³O groups bonded to silicon atoms have been removed as volatilehydrocarbon and hydrocarbon fragments which generate voids in thecoating, resulting in the formation of a porous resin. The heating maybe conducted in a single-step process or in a two-step process. In thetwo-step heating process the siloxane resin is first heated at atemperature sufficient to effect curing without significant removal ofthe R² and R³O groups. Generally this temperature can be in a range offrom greater than 20° C. to 350° C. Then the cured siloxane resincoating is further heated at a temperature within a range of greaterthan 350° C. up to the lesser of the decomposition of the siloxane resinbackbone or the R¹ groups bonded to silicon atoms described herein aboveto effect removal of the R² and R³O groups (leaving groups) from thesilicon atoms. Generally, it is preferred that the removal step beconducted at a temperature in a range of greater than 350° C. to 600°C., with a temperature in a range of 400° C. to 550° C. being mostpreferred. During the curing and heating step, greater than 90 molepercent of alkyl containing R¹ groups remain on the siloxane resin andgreater than 70 mole percent of hydrogen containing R¹ groups remain onthe siloxane resin.

In the single-step process the curing of the siloxane resin and removalof the R² and R³O groups are effected simultaneously by heating at atemperature within a range of greater than 20° C. up to the lesser ofthe decomposition of the siloxane resin backbone or the R¹ groups bondedto silicon atoms described herein above to effect removal of the R² andR³O groups from the cured coating composition. Generally, it ispreferred that the curing/removal step be conducted at a temperature ina range of greater than 350° C. to 600° C., with a temperature in arange of 400° C. to 550° C. being most preferred. The porosity in thefinal insoluble porous resin can be controlled by the mole percent of R²and R³O groups in the siloxane resin and how the siloxane resin isheated.

It is preferred that the heating be conducted in an inert atmosphere,although other atmospheres may be used. Inert atmospheres useful hereininclude, but are not limited to, nitrogen, helium and argon with anoxygen level less than 50 parts per million and preferably less than 15parts per million. Heating may also be conducted at any effectiveatmospheric pressure from vacuum to above atmospheric and under anyeffective oxidizing or non-oxidizing gaseous environment such as thosecomprising air, O₂, oxygen plasma, ozone, ammonia, amines, moisture,N₂O, hydrogen, etc.

By the above method a thin (less than 5 μm) insoluble porous coating isproduced on the substrate. Preferably the insoluble porous coatings havea thickness of 0.3 to 2.5 μm and a thickness of 0.5 to 1.2 μm being morepreferable. The coating smoothes the irregular surfaces of the varioussubstrates and has excellent adhesion properties.

Any method of heating such as the use of a quartz tube furnace, aconvection oven, or radiant or microwave energy is generally functionalherein. Similarly, the rate of heating is generally not a criticalfactor, but it is most practical and preferred to heat the coatedsubstrate as rapidly as possible.

The insoluble porous coatings produced herein may be produced on anysubstrate. However, the coatings are particularly useful on electronicsubstrates. By “electronic substrate” it is meant to include siliconbased devices and gallium arsenide based devices intended for use in themanufacture of a semiconductor component including focal plane arrays,opto-electronic devices, photovoltaic cells, optical devices,transistor-like devices, 3-D devices, silicon-on-insulator devices,super lattice devices and the like.

Additional coatings may be applied over the insoluble porous coating ifdesired. These can include, for example SiO₂ coatings, siliconcontaining coatings, silicon carbon containing coatings, siliconnitrogen containing coatings, silicon oxygen nitrogen containingcoatings, silicon nitrogen carbon containing coatings and/or diamondlike coatings produced from deposition (i.e. CVD, PECVD, etc.) ofamorphous SiC:H, diamond, silicon nitride. Methods for the applicationof such coatings are known in the art. The method of applying anadditional coating is not critical, and such coatings are typicallyapplied by chemical vapor deposition techniques such as thermal chemicalvapor deposition (TCVD), photochemical vapor deposition, plasma enhancedchemical vapor deposition (PECVD), electron cyclotron resonance (ECR),and jet vapor deposition. The additional coatings can also be applied byphysical vapor deposition techniques such as sputtering or electron beamevaporation. These processes involve either the addition of energy inthe form of heat or plasma to a vaporized species to cause the desiredreaction, or they focus energy on a solid sample of the material tocause its deposition.

The insoluble porous coatings formed by this method are particularlyuseful as coatings on electronic devices such is integrated circuits.The dielectric constant of the insoluble porous coatings made by thismethod range from 1.5 to 3, with a range from 1.5 to 2.5 being morepreferred for interlayer dielectric coatings. By the term “porous” it ismeant an insoluble porous coating having a porosity of 1 to 60 volumepercent. Porosity in the range of 10 to 60 volume percent is preferred.The modulus of the insoluble porous coatings ranges from 1.0 to 10 GPa.

EXAMPLES

The following non-limiting examples are provided so that one skilled inthe art may more readily understand the invention. In the Examplesweights are expressed as grams (g). Molecular weight is reported asweight average molecular weight (Mw) and number average molecular weight(Mn) determined by Gel Permeation Chromatography. Analysis of thesiloxane resin composition was done using ²⁹Si nuclear magneticresonance (NMR). Nitrogen adsorption porosimetry measurements wereperformed using a QuantaChrome Autosorb 1 MP system. The cured siloxaneresins were ground into fine powders before being placed into the samplecell, degassed for several hours, and loaded into the analysis station.The surface area was determined by the Brunauer-Emmett-Teller method.The total pore volume was determined from the amount of vapor adsorbedinto the pores at a relative pressure close to unity (P/Po=0.995) withthe assumption that the pores filled with adsorbate. Skeletal densitywas measured using a helium gas pycnometer. Skeletal density representsthe true density of the siloxane resin solid structure without includingany interior voids, cracks or pores in the measurement. The percentporosity was calculated from the skeletal density and the total porevolume. Refractive Index (RI) and coating thickness were measured usinga Woollam M-88 Spectroscopic Ellipsometer.

In the following examples Me stands for methyl and tBu stands fortertiary-butyl, AcO stands for acetoxy, and Et stands for ethyl. In thefollowing tables, n.m. indicates the specified property was notmeasured.

Example 1

This example illustrates the formation of siloxane resin compositionswhere R¹ is hydrogen, R² is an organic group having 8 to 22 carbon atomsand R³ is a t-butyl group. HSi(OEt)₃ (A), (AcO)₂Si(OtBu)₂ (B) andR²Si(OMe)₃ (C) were added to 75 g of tetrahydrofuran (THF) in a flaskunder an argon atmosphere in the amounts described in Table 1. Deionizedwater (D) was then added to the flask and the mixture was stirred atroom temperature for 1 hour. Then 75 g of toluene was added to themixture. The solvent was removed using a rotary evaporator to yield asiloxane resin as a viscous oil, which was immediately dissolved into150 g of toluene. The by-product acetic acid was removed as an azeotropewith toluene by heating to 38° C. under reduced pressure. The resin wasagain dissolved into toluene and azeotropically dried and heated inrefluxing toluene for 1 h. The solution was filtered and the solventremoved by evaporation to yield the siloxane resin product. A summary ofthe resin synthesis is shown in Table 1. The R² group in R²Si(OMe)₃ (C)is listed in Table 2. Analysis of the resin structure and molecularweight is shown in Table 3.

TABLE 1 Summary of Resin Synthesis Toluene in reflux Example (A) (B) (C)(D) step Yield No. (g) (g) (g) (g) (g) (g) Appearance 1-1 25.3 40.0 19.314.4 250 43.6 Oil 1-2 22.5 40.0 25.7 14.4 250 46.7 Oil 1-3 36.5 20.025.6 16.4 250 44.4 Oil 1-4 12.4 10.0 10.3 6.7 110 19.6 Wax 1-5 29.0 40.810.3 14.0 120 37.0 Wax 1-6 40.0 25.0 11.8 13.2 250 41.0 Oil 1-7 40.025.0 25.5 15.1 250 47.4 Oil 1-8 40.0 25.0 21.3 14.8 250 49.2 Oil 1-940.0 25.0 16.0 13.1 250 42.9 Oil

TABLE 2 Example No. R² group in (C) 1-1 CH₃(CH₂)₁₇— 1-2 CH₃(CH₂)₁₇— 1-3CH₃(CH₂)₁₇— 1-4 CH₃(CH₂)₁₇— 1-5 CH₃(CH₂)₁₇— 1-6 CH₃O(CH₂CH₂O)₇₋₉(CH₂)₃—1-7 CH₃(CH₂)₁₁OCH₂CH₂— 1-8 (CH₃)₃CCH₂(CH₃)₂C(CH₃)₃CCH₂CHCH₂— 1-9CF₃(CF₂)₅CH₂CH₂—

TABLE 3 Analysis of(HSiO_(3/2))_(f)(R²SiO_(3/2))_(g)((tBuO)_(b)SiO_(4-b/2))_(h)Resins Molarratio Molar ratio of f/g/h of f/g/h Example Based on reactants (²⁹SiNMR) Mn Mw 1-1 0.45/0.15/0.40 0.46/0.13/0.41 9360 72,100 1-20.40/0.20/0.40 0.41/0.19/0.40 5660 80,200 1-3 0.65/0.20/0.15 n.m.n.m. >100,00 1-4 0.55/0.20/0.25 0.54/0.18/0.24 8270 35,900 1-50.50/0.10/0.40 n.m. n.m. n.m. 1-6 0.48/0.09/0.43 0.42/0.04/0.54 n.m.n.m. 1-7 0.43/0.18/0.39 0.43/0.14/0.43 2880 72,200 1-8 0.43/0.18/0.390.55/0.23/0.22 1450 19,700 1-9 0.48/0.083/0.44 0.47/0.05/0.48 9040158,100

Example 2a

This example illustrates the formation of siloxane resin compositionswhere R¹ is hydrogen, R² is octadecyl and R³ is a t-butyl group.(MeO)₂SiCl₂ was prepared by mixing 256.0 g (1.51 mol) of SiCl₄, 228.0 g(1.46 mol) of Si(OMe)₄ and 13.5 g (101.3 mmol) of AlCl₃ under a nitrogenatmosphere in a flask covered by aluminum foil to protect the reactionfrom UV/light. The mixture was stirred at room temperature for 17 daysunder the nitrogen atmosphere while continuing the UV/light protection.Unreacted chlorosilanes were distilled from the reaction mixture undervacuum and trapped in a Schlenk tube immersed in liquid nitrogen. Theremaining product was distilled at 760 mm Hg to give several fractionscharacterized by ²⁹Si NMR and included the following fractions enrichedin Cl₂Si(OMe)₂:

Fraction 1 (b.p. 95° C., 70 m Hg) 87.0 g containing 44.0 weight %Cl₃Si(OMe), 43.2 weight % Cl₂Si(OMe)₂ and 12.8 weight % ClSi(OMe)₃.

Fraction 2 (b.p. 102° C., 70 mm Hg) 119.0 g containing 8.5 weight %Cl₃Si(OMe), 58.7 weight % Cl₂Si(OMe)₂ and 32.8 weight % ClSi(OMe)₃.

Example 2b

(MeO)₂Si(OtBu)₂ was prepared by adding 119.0 g of fraction 2 above to1.5 L (1.5 mol, in excess) of a 1M solution of Potassium t-butoxide/THF,under nitrogen at 0° C. Next 500 ml of anhydrous THF was added to thereaction mixture while stirring for 4 hours at reflux (65° C.). Thesolvent was evaporated at 20° C. under a vacuum of 100 mm Hg. Thereaction product was washed several times with a pentane/diethyl ethermixture, filtered and distilled (92° C., 75 mm Hg) to give 79.5 grams ofa colorless liquid characterized by ²⁹Si NMR, ¹³C NMR, GC and GC-MS,containing 90.3 weight % (MeO)₂Si(OtBu)₂, 3.8 weight % (MeO)₃Si(OtBu)and 5.9 weight % (MeO)Si(OtBu)₃.

Example 2c

A mixture of 5.48 g of the reaction product from example 2b, 8.70 g ofCH₃(CH₂)₁₇Si(OMe)₃ and 7.62 g of HSi(OEt)₃ were added to 40 ml of MIBKfollowed by dropwise addition to a mixture comprising 80 ml MIBK, 40 mltoluene and 60 ml deionized water under a nitrogen atmosphere. Thereaction mixture was refluxed at 120° C. overnight. After cooling, thereaction mixture was separated into 2 phases, water/insoluble materialsand an organic phase. The organic phase was separated from thewater/insoluble materials phase and dried using a dean stark trap. Thesolvent was evaporated using a rotovap giving 7.2 grams of a waxy solid,which was identified by ²⁹Si NMR to beCH₃SiO_(3/2))_(0.55)(CH₃(CH₂)₁₇SiO_(3/2))_(0.24)((tBuO)_(b)SiO_(4-b/2))_(0.21)with Mn of 3030 and Mw of 4410.

Example 3

This example illustrates the formation of siloxane resin compositionswhere R¹ is hydrogen, R² is a substituted phenylethyl group and R³ is at-butyl group under conditions similar to Example 1. HSi(OEt)₃ (A),(AcO)₂Si(OtBu)₂ (B) and para-ZC₆H₄CH₂CH₂Si(OEt)₃ (C) were added to 37 gof tetrahydrofuran (THF) in a flask under an argon atmosphere in theamounts described in Table 4. Deionized water (D) was then added to thesolution and the mixture was stirred at room temperature overnight. 50 gof toluene was added to the reaction mixture. The solvent was removedusing a rotary evaporator at 35 to 40° C. to yield a viscous liquid,which was immediately dissolved into 80 g of toluene. Residual aceticacid was removed as an azeotrope with toluene (azeotrope boiling pointat 38° C.). The viscous liquid was added to 120 g toluene, 10 weight %as viscous liquid (based on total weight of toluene and viscous liquid),which was heated under reflux for 30 minutes and azeotropically driedand refluxed for 1 h. The solution was filtered and the solvent removedby evaporation to yield the final resin product. A summary of the resinsynthesis is shown in Table 4. Analysis of the resin is shown in Table5.

TABLE 4 Summary of Resin Synthesis (C) para- ZC₆H₄CH₂CH₂— (A) (B)Si(OEt)₃ (D) Yield Example No. (g) (g) (g) (g) (g) 3-1 5.6 5 9.6 (Z =Me) 3.1 9.0 3-2 5.6 5 10.2 (Z = MeO) 3.1 9.6 3-3 5.6 5 11.8 (Z = Br) 3.110.8 3-4 5.6 5 9.2 (Z = H) 6.7 8.8

TABLE 5 Analysis of (HSiO_(3/2))_(f)(ZC₆H₄CH₂CH₂)SiO_(3/2))_(g)((tBuO)_(b) SiO_(4-b/2))_(h) Resins. Molar ratio of f/g/h Molar ratio off/g/h Example Based on reactants based ²⁹Si NMR Mn Mw 3-1 0.25/0.5/0.250.27/0.5/0.23 580 1,400 3-2 0.25/0.5/0.25 0.21/0.51/0.28 480 930 3-30.25/0.5/0.25 0.25/0.47/0.28 n.m. 460 3-4 0.25/0.5/0.25 0.24/0.53/0.23n.m. 600

Example 4

This example illustrates the formation of insoluble porous resins whereR¹ is hydrogen, R² is an organic group having 8 to 22 carbon atoms andR³ is a t-butyl group. Resins prepared in Example 1 and Example 2 (2 to3 grams) were weighed into an alumina crucible and transferred into aquartz tube furnace. The furnace was evacuated to <20 mm Hg (<2666 Pa)and backfilled with argon. The samples were heated to the temperaturesshown in Table 6 at a rate of 50° C. to 60° C./minute and held attemperature for 2 hours before cooling to room temperature while underan argon purge. The cured materials obtained were transparent orslightly opaque thick films Pyrolysis conditions, char yields, TGA(Thermogravimetric Analysis) yields and porosity data by nitrogenabsorption measurements are shown in Tables 6 and 7. Char Yield and TGAYield are expressed as weight % retained after analysis at a specifiedtemperature.

TABLE 6 Analysis of cured resins. Char TGA TGA Surface Resin Yield YieldYield Pore Area, Example Sample 450° C. 450° C. 500° C. Volume BET, No.No. (Wt %) (Wt. %) (Wt. %) cm³/g m²/g 4-1 1-1 51.9 73.8 56.4 0.701 12134-2 1-2 53.0 75.2 53.2 0.678 1123 4-3 1-3 53.9 77.5 57.9 0.623 1007 4-41-4 61.8 80.2 58.2 0.349 534 4-5 1-5 60.8 70.8 62.6 0.515 882 4-6 1-648.5 49.8 48.3 0.297 528 4-7 1-7 52.1 52.5 46.4 0.430 723 4-8 1-8 40.138.8 36.2 0.452 770 4-9 1-9 60.6 54.3 52.7 0.246 417  4-10 2c n.m. n.m.n.m. 0.457 752

TABLE 7 Analysis of cured resins. Resin Skeletal Example Sample DensityPore Volume Porosity Surface Area, No. No. G/cm³ cm³/g Wt. % BET, m²/g4-1 1-1 1.669 0.701 53.9 1213 4-2 1-2 1.638 0.678 52.6 1123 4-3 1-31.337 0.623 45.4 1007 4-4 1-4 1.346 0.349 32.0 534 4-5 1-5 1.751 0.51547.4 882

Example 5

This example illustrates the formation of insoluble porous coatings on asubstrate where R¹ is hydrogen, R² is an organic group having 8 to 22carbon atoms and R³ is a t-butyl group. Resins prepared in Examples 1, 2and 3 (2 to 3 g) were dissolved in MIBK to form a clear solutioncontaining 25 weight % as resin. The solution was filtered through a 1.0μm syringe membrane filter, then a 0.2 μm syringe membrane filter toremove any large particles. The solution was applied to a silicon waferby spin coating at 2000 rpm for 20 seconds. The coated silicon waferswere put into a quartz tube furnace and the furnace was purged withnitrogen. The furnace was quickly heated to 450° C. (50° C. to 60°C./minute) and held at 450° C. for 2 hours, then cooled to roomtemperature while maintaining the nitrogen purge. The coated wafers werestored under a nitrogen atmosphere before the property measurements.Properties of the thin films are shown in Table 8.

TABLE 8 Thin film Properties of resins on silicon wafers, 450° C. ResinExample Sample Modulus, Hardness, Thickness, No. No. Dk Gpa Gpa Å RI 5-11-1 2.30 3.4 0.53 9396 1.186 5-2 1-2 1.97 2.1 0.36 11795 1.173 5-3 1-31.70 1.8 0.31 15020 1.178 5-4 1-4 2.55 4.7 0.80 4921 1.288 5-5 1-5 2.254.4 0.36 14,532 1.165 5-6 1-6 2.67 6.9 0.63 7478 1,233 5-7 1-7 2.58 6.30.56 5737 1.231 5-8 1-8 2.72 8.0 0.66 4048 1.235 5-9 1-9 2.82 10.5 0.944244 1.266 5-10 2c 2.18 2.0 0.39 3295 1.249 5-11 3-1 2.56 3.7 0.52 76971.339 5-12 3-2 2.89 6.0 0.94 7355 1.400 5-13 3-3 n.m. 5.9 0.81 66741.433 5-14 3-4 2.47 5.1 0.80 7372 1.342

Example 6

This example illustrates the formation of insoluble porous coatings on asubstrate where R¹ is hydrogen, R² is an organic group having 8 to 22carbon atoms, and R³ is a t-butyl group under various cure temperatures.Resins prepared in Example 1 (2 to 3 g) were dissolved in MIBK to form aclear solution containing 25 weight % as resin. The solution wasfiltered through a 1.0 μm syringe memberane filter, followed by a 0.2 μmsyringe membrane filter to remove any large particles. The solution wasapplied to a silicon wafer by spin coating at 2000 rpm for 20 seconds.The coated silicon wafers were put into a quartz tube furnace and thefurnace was purged with nitrogen. The furnace was heated 250, 390 and450° C. and held at each temperature for 1 hour, respectively, thencooled to room temperature while maintaining the nitrogen purge. Thecoated wafers were stored under a nitrogen atmosphere before theproperty measurements. Properties of the thin films are shown in Table9.

TABLE 9 Thin film Properties of resins on silicon wafers. Resin ExampleSample Modulus, Hardness, Thickness, RI No. No. Dk Gpa Gpa Å Tyger 6-11-1 2.17 2.3 0.24 11,580 1.215 6-2 1-3 1.80 1.2 0.14 11,749 1.206

Example 7

This example illustrates the formation of siloxane resin compositionswhere R¹ is methyl, R² is octadecyl and R³ is a t-butyl group.MeSi(OMe)₃ (A), (AcO)₂Si(OtBu)₂ (B) and CH₃(CH₂)₁₇Si(OMe)₃ (C) wereadded to 75 g of THF in a flask under an argon atmosphere in the amountsdescribed in Table 9. Deionized water (D) was then added to the solutionand the mixture was stirred at room temperature for 1 hour. 75 g oftoluene was added to the reaction mixture. The solvent was removed viaevaporation using a rotary evaporator to yield the product as viscousoil, which was immediately dissolved into 150 g of toluene. Residualacetic acid was removed as an azeotrope with toluene under reducedpressure by heating to 38° C. The resin was again dissolved into 250 gof toluene and azeotropically dried and refluxed for 1 h. The solutionwas filtered and the solvent removed by evaporation to yield the finalresin product. A summary on the resin synthesis is shown in Table 10.The molecular weight information for the resins is shown in Table 11.

TABLE 10 Summary of Resin Synthesis Example (A) (B) (C) (D) Yield No.(g) (g) (g) (g) (g) Appearance 7-1 9.3 10.2 12.8 6.1 12.4 Wax 7-2 14.940 10.28 11.2 34.4 Oil 7-3 23.4 40.1 12.8 14.4 40.1 Oil 7-4 21.0 40.019.3 14.4 45.4 Wax 7-5 27.8 29.9 12.8 15.0 40.0 Oil

TABLE 11 Analysis of (MeSiO_(3/2))_(f)(CH₃(CH₂)₁₇SiO_(3/2))_(g)((tBuO)_(b)SiO_(4-b/2))_(h) Resins. Molar ratio of f/g/h Example Basedon reactants Mn Mw 7-1 0.55/0.20/0.25 6730 22,600 7-2 0.40/0.10/0.502790 18,300 7-3 0.50/0.10/0.40 1560 9800 7-4 0.45/0.15/0.40 1830 10,1007-5 0.60/0.10/0.30 2470 8320

Example 8

This example illustrates the formation of insoluble porous resins whereR¹ is methyl, R² is octadecyl and R³ is a t-butyl group. Resins preparedin Example 7 (2 to 3 g) were weighed into an alumina crucible andtransferred into a quartz tube furnace. The furnace was evacuated to <20mmHg (<2666 Pa) and backfilled with argon. The samples were heated tothe temperatures shown in Table 12 at a rate of 50° C. to 60° C./minuteand held at temperature for 2 hours before cooling to room temperaturewhile under an argon purge. The cured materials obtained weretransparent or slightly opaque thick. Pyrolysis conditions, char yields,TGA yields and porosity data by nitrogen absorption measurements areshown in Tables 12 and 13.

TABLE 12 Porosity and char yields of cured resins. Char TGA TGA SurfaceResin Yield Yield Yield Pore Area, Example Sample 450° C. 450° C. 500°C. Volume BET, No. No. (Wt %) (Wt. %) (Wt %) cm³/g m²/g 8-1 7-1 47.078.7 49.2 0.515 719 8-2 7-2 55.1 59.5 51.4 0.451 731 8-3 7-3 52.7 60.752.5 0.523 874 8-4 7-4 51.9 60.8 48.5 0.464 749 8-5 7-5 58.1 64.9 55.80.436 711

TABLE 13 Analysis of cured resins. Resin Skeletal Example Sample DensityPore Volume Porosity Surface Area, No. No. G/cm³ cm³/g Wt. % BET, m²/g8-1 7-1 1.380 0.515 41.5 719 8-2 7-2 1.591 0.451 41.8 731 8-3 7-3 1.4290.523 42.8 874 8-4 7-4 1.508 0.464 41.2 749 8-5 7-5 1.447 0.436 38.7 711

Example 9

This example illustrates the formation of insoluble porous coatings on asubstrate where R¹ is methyl, R² is octadecyl and R³ is a t-butyl group.Resins prepared in Example 7 (2 to 3 g) were dissolved in MIBK to form aclear solution containing 25 weight % as resin. The solution wasfiltered through a 1.0 μm syringe membrane filter followed by a 0.2 μmsyringe membrane filter to remove any large particles. The solution wasapplied to a silicon wafer by spin coating at 2000 rpm for 20 seconds.The coated silicon wafers were put into a quartz tube furnace and thefurnace was purged with nitrogen. The furnace was quickly heated to 450°C. (50° C. to 60° C./minute) and held at 450° C. for 2 hours, thencooled to room temperature while maintaining the nitrogen purge. Thecoated wafers were stored under a nitrogen atmosphere before theproperty measurements. Modulus and dielectric constants (Dk) of the thinfilms are shown in Table 14.

TABLE 14 Thin film Properties of resins on silicon wafers, 450° C. ResinExample Sample Modulus, Hardness, Thickness, No. No. Dk Gpa Gpa Å RI 9-17-1 2.43 4.7 0.69 4921 1.295 9-2 7-2 2.19 3.2 0.47 7960 1.242 9-3 7-32.24 4.8 1.04 7030 1.266 9-4 7-4 2.02 3.3 0.80 7248 1.242 9-5 7-5 2.133.7 0.86 7622 1.274

Example 10

Under the protection of argon, measured amounts of THF/toluene (3:2wt./wt) solvent, Cl₂Si(OtBu)₂, HSi(OEt)₃ and RSi(OMe)₃ were added to areaction flask to form a clear solution. Deionized H₂O was then added tothe reaction mixture slowly. The materials were then stirred one hourwithout heat and the HCl by-product was removed by continuous argonsweep. The volatile materials were then vacuum (1 mmHg) evaporated atroom temperature and the residual oil-like product was dissolved intoluene. The product solution was azeotropically dried and bodied for 30minutes in refluxing toluene. The solution was filtered through a 1.0micron syringe filter. Vacuum evaporation of solvents at 25° C. and 1 mmHg yielded a final product. The formulations, synthetic conditions andyields are summarized in Table 15. The molecular weight information andcomposition are given in Table 16.

TABLE 15 Summary of Resin Synthesis THF/ toluene/ Toluene TheoreticalHSi(OEt)₃ Cl₂Si(OtBu)₂ RSi(OMe)₃ H₂O body Yield/gr. Sample Compositiongram/ gram grams grams. grams appearance 10-1 T_(0.36)^(H)Q_(0.46)T_(0.18) ^(R) 9.0 17.3 (MeO)₃Si—(CH₂)₁₇CH₃ 60/40/4.0 90.020.0, wax 10.0 10-2 T_(0.50) ^(H)Q_(0.33)T_(0.17) ^(R) 9.0 9.0(MeO)₃Si-tetraisobuty 60/40/4.0 120.4 11.7, solid  6.6 Q includesQ^((OtBu)b)

TABLE 16 Material Characterization Theoretical Sample Comp. Mw Mn 10-1T_(0.36) ^(H)Q_(0.46)T_(0.18) ^(R) — — 10-2 T_(0.50)^(H)Q_(0.33)T_(0.17) ^(R) 4,790 188,800

Example 11

In a typical procedure, a mixture of Cl₂Si(OtBu)₂, RSiCl₃ and HSiCl₃were dissolved into 40 ml of MIBK and added dropwise into a mixtureconsiting of 80 ml MIBK, and 60 ml of 0.5M HCl water in a 500 ml flaskat 0° C. under nitrogen. The reaction mixture then mixed at 25° C. forovernight. The water and insoluble materials were removed and theorganic phase dried using a dean stark trap. The solvent was evaporatedusing a ratovap and 4.0 g of white solid was obtained. A summary on theresin synthesis is shown in Table 17. The molecular weigh informationand composition are in Table 18.

TABLE 17 Summary of Resin Synthesis Theoretical HSiCl₃ Cl₂Si(OtBu)₂RSiCl₃ Yield/gr., Sample Composition gram/ gram grams appearance 11-1T_(0.5) ^(H)Q_(0.25)T_(0.25) ^(R) 7.8 7.0 CH₃(CH₂)₁₇SiCl₃   4, solid11.2 11-2 T_(0.4) ^(H)Q_(0.375)T_(0.22) ^(R) 6.2 10.6 CH₃(CH₂)₁₇SiCl₃  9, solid 10.0 11-3 T_(0.5) ^(H)Q_(0.25)T_(0.25) ^(R) 7.8 7.0Cl₃Si-triisobutylene 7.9, wax  8.7 Q includes Q^((OtBu)b)

TABLE 18 Material Characterization Theoretical Resin Sample R GroupResin Comp. Composition by NMR Mw Mn 11-2 CH₃(CH₂)₁₇ T_(0.4)^(H)Q_(0.375)T_(0.225) ^(R) T_(0.31) ^(Cl8)Q_(0.08)T_(0.61) ^(H) 142003790 11-3 tri-isobutylene T_(0.5) ^(H)Q_(0.25)T_(0.25) ^(R) T_(0.42)^(Cl2)Q_(0.06)T_(0.53) ^(H) 1870 1380

Example 12

An aliquot of resin samples prepared in example 11 were weighed into analumna crucible and transferred into a tube furnace. The furnace wasthen evacuated to <20 torr and backfilled with argon. Under a purge ofargon, the sample was heated to a designated temperature at 10°C./minute and held at temperature for 2 hours before cooling to roomtemperature. The final cured materials were obtained as transparent orslightly opaque thick free standing films. The pyrolysis conditions,char yields and porosity information by nitrogen absorption measurementsare given in Table 19.

TABLE 19 Porosity and char yields for resins pyrolyzed at 450° C. PoreSurface Resin Composition, Volume, Area, Sample R group NMR cc/g BET,m²/g II-I CH₃(CH₂)₁₇ T_(0.18) ^(R)Q_(0.22)T_(0.60) ^(H) 0.54 925 II-2CH₃(CH₂)₁₇ T_(0.31) ^(C18)Q_(0.08)T_(0.61) ^(H) 0.48 724 II-3tri-isobutylene T_(0.42) ^(C12)Q_(0.06)T_(0.53) ^(H) 0.44 746 Q includesQ^((OtBu)b)

Example 13

An aliquot of resins prepared in example 11 were dissolved inmethylisobutyl ketone (MIBK) to form a 25 wt. % clear solution. Thesolution was sequentially filtered through a 1.0 μm and a 0.2 μm syringemembrane filters to remove any large particles. The solution was appliedto the silicon wafer and spin coated on silicon wafer using either aKarl Suss RC8 or a Headway spin coater and spun at 2000 rpm for 20seconds. The thickness of the as-spun films can be controlled by acombination of solution concentration and spin speed, ranging from 2000to 20,000 angstroms.

The resin films were loaded into an QTF furnace and quickly heated to450° C. under nitrogen. The films were heated at 450° C. for 2 hours,then cool to room temperatures. All the coated wafers were stored undera nitrogen atmosphere before the property measurements. The modulus anddielectric constants of the thin films prepared from T^(H) _(a)T^(R)_(b)Q_(c) resins are shown in table 20.

TABLE 20 Thin film properties of T_(a) ^(H)T_(b) ^(R)Q_(c) resinsPost-cured Composition, Thickness Modulus Sample R group NMR (Å) RI dk(GPa) II-1 CH₃(CH₂)₁₇Si T_(0.18) ^(R)Q_(0.22)T_(0.60) ^(H) 7773 1.2011.82 2.3 II-2 CH₃(CH₂)₁₇ T_(0.31) ^(C18)Q_(0.08)T_(0.61) ^(H) 1679 —1.82 — II-3 tri-isobutylene T_(0.42) ^(C12)Q_(0.06)T_(0.53)H 4792 1.2852.19 — II-3 tri-isobutylene T_(0.42) ^(C12)Q_(0.06)T_(0.53) ^(H) 38441.358 1.72 3.3 Q includes Q^((OtBu)b)

Comparative Example 1

This example illustrates the formation of siloxane resin compositionswhere R¹ is hydrogen, R² is not present and R³ is a t-butyl group.HSi(OEt)₃ (A) and (AcO)₂Si(OtBu)₂ (B) were added to 72 g oftetrahydrofuran (THF) in a flask under an argon atmosphere in theamounts described in Table 13. Deionized water (D) was then added to theflask and the mixture was stirred at room temperature for 1 hour. Then75 g of toluene was added to the mixture. The solvent was removed viaevaporation using a rotary evaporator to yield a siloxane resin as aviscous oil, which was immediately dissolved into 150 g of toluene.By-product acetic acid was removed as an azeotrope with toluene byheating to 38° C. under reduced pressure. The resin was again dissolvedinto 110 g of toluene and azeotropically dried and heated in refluxingtoluene for 1 h. The solution was filtered and the solvent removed byevaporation to yield the siloxane resin product. A summary of the resinsynthesis is shown in Table 21. The molecular weight information for theresins is shown in Table 22.

TABLE 21 Summary of Resin Synthesis Example (A) (B) (D) Yield No. (g)(g) (g) (g) Appearance C1-1 5.67 40.2 6.1 23.7 Gum C1-2 1.23 30.0 6.6518.7 Gum C1-3 26.2 20.0 10.0 19.2 Gum

TABLE 22 Analysis of (HSiO_(3/2))_(f)((tBuO)_(b)SiO_(4-b/2))_(h) Resins.Molar ratio of f/h Molar ratio of f/g Example Based on reactants Basedon ²⁹Si NMR Mn Mw C1-1 0.20/0.80 0.21/0.79 3,040 6,300 C1-2 0.40/0.600.43/0.57 6,750 25,800 C1-3 0.70/0.30 n.m. n.m. n.m.

Samples of the resins (2 to 3 g) were weighed into an alumina crucibleand transferred into a quartz tube furnace. The furnace was evacuated to<20 mmHg (<2666 Pa) and backfilled with argon. The samples were heatedto 450° C. at a rate of 50° C. to 60° C./minute and held at 450° C. for1 hour before cooling to room temperature while under an argon purge.The cured siloxane resins were obtained as transparent or slightlyopaque thick films. The pyrolysis temperature, Char Yield and porositydata are shown in Table 23. Char Yield is expressed as weight percentretained after analysis at the specified temperature.

TABLE 23 Porosity and char yields of cured resins. Resin Skeletal CharPore Sample Density Yield Volume Porosity Surface Area, No. (g/cm³) (Wt%) (cm³/g) (%) BET, (m²/g) C1-1 1.970 45.8 0.313 38.1 550 C1-2 1.98251.4 0.317 38.6 559 C1-3 1.787 65.0 0.224 28.6 392

Samples of the resins (2 to 3 g) were dissolved in MIBK to form a clearsolution containing 25 weight % as resin. The solution was filteredthrough a 1.0 μm syringe membrane filter followed by a 0.2 μm syringemembrane filter to remove any large particles. The solution was appliedto a silicon wafer by spin coating at 2000 rpm for 20 seconds. Thecoated silicon wafers were put into a quartz tube furnace and thefurnace was purged with nitrogen. The furnace was heated to 450° C. (50°C. to 60° C./minute) and held at temperature for 2 hours, then cooled toroom temperature while maintaining the nitrogen purge. The coated waferswere stored under a nitrogen atmosphere before the propertymeasurements. Modulus and dielectric constants (Dk) of the thin filmsare shown in Table 24.

TABLE 24 Thin film Properties of resins on silicon wafers Resin SampleModulus, Hardness, Thickness, No. Dk Gpa Gpa Å R1 C1-I 24.3 18.6 0.884,180 1.321 C1-2 14.9 16.1 0.77 4,120 1.355 C1-3 6.34 10.8 1.06 6,5901.290

This example illustrates that siloxane resins where R¹ is hydrogen, R²is not present and R³ is a t-butyl group result in very good modulus butunacceptably high Dk when compared with Examples 1 and 2. This examplealso shows that porosity is lower when compared to Examples 1 and 2which contain both R² and R³ groups.

Comparative Example 2

This example illustrates the formation of siloxane resin compositionswhere R¹ is methyl, R² is not present and R³ is a t-butyl group.MeSi(OMe)₃ (A), (AcO)₂Si(OtBu)₂ (B) and THF were added to a flask underan argon atmosphere in the amounts described in Table 17. AcO stands foracetoxy, Me stands for methyl and tBu stands for tertiary-butyl.Deionized water was then added to the flask and the mixture was stirredat room temperature for 1 hour. 75 g of toluene was added to thereaction mixture. The solvent was removed via evaporation using a rotaryevaporator to yield the product as viscous oil, which was immediatelydissolved into 150 g of toluene. Residual acetic acid was removed as anazeotrope with toluene under reduced pressure (azeotrope boiling pointat 38° C.). The resin was again dissolved into 110 g of toluene andazeotropically dried and refluxed for 1 h. The solution was filtered andthe solvent removed by evaporation to yield the final resin product. Asummary of the resin synthesis is shown in Table 25. The molecularweight information for the resins is shown in Table 26.

TABLE 25 Summary of Resin Synthesis Comparative Example (A) (B) THF H₂OYield No. (g) (g) (g) (g) (g) Appearance C2-1 18.6 40.0 72.0 11.1 23.6Solid C2-2 27.9 40.0 80.0 14.5 26.0 Solid C3-3 43.5 40.3 90.0 20.0 40.0Solid C3-4 92.9 39.9 120.3 28.3 67.3 Wax

TABLE 26 Analysis of (MeSiO_(3/2))_(f)((tBuO)_(b)SiO_(4-b/2))_(h)Resins. Molar ratio of f/h Molar ratio of f/g Example Based on reactantsBased on ²⁹Si NMR Mn Mw C2-1 0.50/0.50 0.44/0.56 2,990 17,700 C2-20.60/0.40 0.55/0.44 2,010 46,000 C2-3 0.70/0.30 0.69.0.31 n.m. >100,000C2-4 0.85/0.15 0.83/0.17 3,400 32,100

Samples of the resins (2 to 3 g) were weighed into an alumina crucibleand transferred into a quartz tube furnace. The furnace was evacuated to<20 mmHg (<2666 Pa) and backfilled with argon. The samples were heatedto 450° C. at a rate of 10° C./minute and held at 450° C. for 1 hourbefore cooling to room temperature while under an argon purge. The curedsiloxane resins were obtained as transparent or slightly opaque thickfilms. The pyrolysis temperature, Char Yield and porosity data are shownin Table 27. Char Yield is expressed as weight percent retained afteranalysis at the specified temperature.

TABLE 27 Porosity and char yields of cured resins. Resin Skeletal CharPore Sample Density Yield Volume Porosity Surface Area, No. (g/cm³) (Wt%) (cm³/g) (%) BET, (m²/g) C2-1 1.693 60.5 0.271 31.4 461 C2-2 1.62472.5 0.280 31.3 481 C2-3 1.505 78.0 0.249 27.2 425 C2-4 1.398 76.5 0.12514.9 168

Samples of the resins (2 to 3 g) were dissolved in MIBK to form a clearsolution containing 25 weight % as resin. The solution was filteredthrough a 1.0 μm syringe membrane filter followed by a 0.2 μm syringemembrane filter to remove any large particles. The solution was appliedto a silicon wafer by spin coating at 2000 rpm for 20 seconds. Thecoated silicon wafers were put into a quartz tube furnace and thefurnace was purged with nitrogen. The furnace was heated to thetemperature indicated in Table 21 (50° to 60° C./minute) and held attemperature for 2 hours, then cooled to room temperature whilemaintaining the nitrogen purge. The coated wafers were stored under anitrogen atmosphere before the property measurements. Modulus anddielectric constants (Dk) of the thin films are shown in Table 28.

TABLE 28 Thin film Properties of resins on silicon wafers Resin SampleTemperature Modulus, Hardness, Thickness, No. ° C. Dk Gpa Gpa Å RI C2-1450 2.32 7.9 0.91 6,300 1.273 C2-1 425 2.36 9.0 1.11 6,728 1.276 C2-1400 2.48 8.7 0.95 6,826 1.271 C2-2 450 2.16 3.5 0.51 6,199 1.252 C2-2425 2.48 5.5 0.65 6,374 1.307 C2-2 400 2.55 4.8 0.53 6,333 1.338 C2-3450 2.61 7.4 1.11 8,551 1.347 C2-3 425 2.52 6.9 1.08 9,025 1.350 C2-3400 2.38 7.4 1.19 9,413 1.336 C2-4 450 2.88 7.8 1.4 10,500 1.368 C2-4425 2.71 6.0 1.19 10,525 1.383 C2-4 400 2.63 7.1 1.25 10,892 1.375

This example illustrates that siloxane resins where R¹ is methyl, R² isnot present and R³ is a t-butyl group result in good Dk but porosity islower when compared to Example 7 which contains both R² and R³ groups.

Comparative Example 3

This example illustrates the formation of siloxane resin compositionswhere R¹ is hydrogen, R² is octadecyl and R³ is not present. Twosolutions of a hydrogen silsesquioxane resin having a weight averagemolecular weight of 70,000, prepared by the method of Collins et al.,U.S. Pat. No 3,615,272, dissolved in toluene were reacted with1-octadecene at 110° C. in the presence of 1.2×10⁻⁵ weight parts ofplatinum in the form of a complex with1,3-diethenyl-1,1,3,3-tetramethyldisiloxane for 2 hours. A 2 g sample ofeach resin solution after reaction was placed into a ceramic crucible,heated at 350° C. in nitrogen for 0.5 hour, and then heated at 500° C.in nitrogen for 1 hour. A sample of each resin solution was diluted withtoluene to 17 weight % and applied to a silicon wafer by spin coatingand cured as described in Example 5 and dielectric constant wasmeasured. Table 29 shows the weight parts of solvent and 1-octadeceneused per 1 weight part of hydrogen silsesquioxane resin, porosity anddielectric constant for each sample. Sample C3-3 is the hydrogensilsesquioxane resin solution in toluene which was not reacted with1-octadecene.

TABLE 29 Analysis of (HSiO_(3/2))_(f)(CH₃(CH₂)₁₇SiO_(3/2))_(g) ResinsComparative Wt. Parts Wt. Parts Molar ratio of f/g Example of of Basedon Porosity No. toluene octadecene Reactants % Dk C3-1 2.22 1.600.66/0.34 27.1 2.1 C3-2 2.72 1.10 0.77/0.23 27.9 2.2 C3-3 4.72 0 1.0/0  0 3.0

This example illustrates that siloxane resins where R¹ is hydrogen, R²is octadecyl and R³ is not present result in good Dk but porosity islower when compared to Examples 1 and 2 which contains both R² and R³Ogroups.

What is claimed is:
 1. A siloxane resin composition comprising: (A) 30to 60 mole parts of R¹SiO_(3/2) siloxane units wherein R¹ isindependently selected from the group consisting of alkyl having 1 to 5carbon atoms, hydrogen, and mixtures thereof; (B) 10 to 25 mole parts ofR²SiO_(3/2) siloxane units wherein R² is independently selected from thegroup consisting of monovalent organic groups having 6 to 30 carbonatoms and monovalent substituted organic groups having 6 to 30 carbonatoms; and (C) 20 to 50 mole parts of (R³O)_(b)SiO_((4-b)/2) siloxaneunits, wherein R³ is independently selected from the group consisting ofbranched alkyl groups having 3 to 30 carbon atoms and branchedsubstituted alkyl groups having 3 to 30 carbon atoms, b is from 1 to 3,components (A), (B) and (C) combined total 100 mole parts and the sum ofcomponents (A), (B) and (C) total at least 70 percent of the siloxaneunits in the resin composition.
 2. The siloxane resin composition asclaimed in claim 1, wherein R¹ is selected from the group consisting ofmethyl, hydrogen and mixtures thereof, R² is an unsubstituted orsubstituted alkyl group having 10 to 20 carbon atoms and R³ is atertiary alkyl having 4 to 18 carbon atoms.
 3. The siloxane resincomposition as claimed in claim 1, wherein R³ is t-butyl.
 4. Thesiloxane resin composition as claimed in claim 1 wherein the resinadditionally contains at least one siloxane unit selected fromR¹Si(X)_(d)O_((3-d/2)); R²Si(X)_(d)O_((3-d/2));Si(X)_(d)(OR³)_(f)O_((4-d-f/2)), SiO_(4/2) and mixtures thereon in whichR¹, R², and R³ are defined above; each X is independently a hydrolyzablegroup or a hydroxy group, and d and f are from 1 to
 2. 5. A method forpreparing the siloxane resin of claim 1 comprising R¹SiO_(3/2) siloxaneunits, R²SiO_(3/2) siloxane units and (R³O)_(b)SiO_((4-b)/2) siloxaneunits, wherein said method comprises: combining (a) 30 to 60 mole partsof a silane or a mixture of silanes of the formula R¹SiX₃, where each R¹is independently selected from the group consisting of alkyl having 1 to5 carbon atoms, hydrogen and mixtures thereof, X is independently ahydrolyzable group or a hydroxy group; (b) 10 to 25 mole parts of asilane or a mixture of silanes of the formula R²SiX₃, where each R² isindependently selected from the group consisting of monovalent organicgroups having 6 to 30 carbon atoms and substituted monovalent organicgroups having 6 to 30 carbon atoms, X is independently a hydrolyzablegroup or a hydroxy group; (c) 20 to 50 mole parts of a silane or amixture of silanes of the formula (R³O)_(c)SiX_((4-c)), where R³ isindependently selected from the group consisting of branched alkylgroups having 3 to 30 carbon atoms and substituted branched alkyl groupshaving 3 to 30 carbon atoms, c is from 1 to 3 inclusive, X isindependently a hydrolyzable group or a hydroxy group, silanes (a), (b)and (c) combined total 100 mole parts; and (d) water, for a time andtemperature sufficient to effect the formation of the siloxane resin. 6.The method as claimed in claim 5, further comprising a solvent.
 7. Themethod as claimed in claim 5, wherein R¹ is selected from the groupconsisting of methyl, hydrogen and mixtures thereof, R² is anunsubstituted or substituted alkyl group having 10 to 20 carbon atomsand R³ is a tertiary alkyl having 4 to 18 carbon atoms.
 8. The method asclaimed in claim 5, wherein R³ is t-butyl.
 9. The method as claimed asin claim 5, wherein the water is present in a range from 0.5 to 2.0moles of water per mole of X in silane (a), silane (b) and silane (c).10. The method as claimed as in claim 5, wherein the water is present ina range from 0.8 to 1.8 moles of water per mole of X in silane (a),silane (b) and silane (c).
 11. The method as claimed in claim 5 whereinX is a chlorine atom.
 12. The product produced by the method of claim11.
 13. A method of forming an insoluble porous resin, which comprises:(A) heating the siloxane resin of claim 1 for a time and temperaturesufficient to effect curing of the siloxane resin, (B) further heatingthe siloxane resin for a time and temperature sufficient to effectremoval of the R² and R³O groups from the cured siloxane resin, therebyforming an insoluble porous resin.
 14. The method as claimed in claim13, where the heating in step (A) is from greater than 20° C. to 350° C.and the further heating in step (B) is from greater than 350° C. to 600°C.
 15. The method as claimed in claim 13, where the curing of thesiloxane resin and removal of the R³O groups from the cured siloxaneresin is done in a single step.
 16. The method as claimed in claim 13,wherein the insoluble porous resin has a porosity from 1 to 60 volumepercent and a modulus from 1.0 to 10 GPa.
 17. A method of forming aninsoluble porous coating on a substrate comprising the steps of (A)coating the substrate with a coating composition comprising a siloxaneresin composition having (a) 30 to 60 mole parts of R¹SiO_(3/2) siloxaneunits wherein R¹ is selected from the group consisting of alkyl having 1to 5 carbon atoms, hydrogen, and mixtures thereof, (b) 10 to 25 moleparts of R²SiO_(3/2) siloxane units wherein R² is selected from thegroup consisting of monovalent organic groups having 6 to 30 carbonatoms and monovalent substituted organic groups having 6 to 30 carbonatoms, and (c) 20 to 50 mole parts of (R³O)_(b)SiO_((4-b)/2) siloxaneunits, wherein R³ is selected from the group consisting of branchedalkyl groups having 3 to 30 carbon atoms and branched substituted alkylgroups having 3 to 30 carbon atoms, b is 1 to 3, components (a), (b) and(c) combined total 100 mole parts and the sum of (a), (b) and (c) is atleast 70 percent of total siloxane units in the resin composition; (B)heating the coated substrate to a temperature sufficient to effectcuring of the coating composition, and (C) further heating the coatedsubstrate to a temperature sufficient to effect removal of the R² andR³O groups from the cured coating composition, thereby forming aninsoluble porous coating on the substrate.
 18. The method as claimed inclaim 17, where the heating in step (B) is from greater than 20° to 350°C. and the further heating in step (C) is from greater than 350° to 600°C.
 19. The method as claimed in claim 17, where the curing and removalof the R² and R³O groups is done in a single step at a temperaturewithin a range of greater than 20° C. to 600° C.
 20. The method asclaimed in claim 17, where the removal of the R² and R³O groups is doneat a temperature within a range of greater than 350° C. to 600° C. 21.The method as claimed in claim 17, wherein the insoluble porous coatinghas a porosity of 1 to 60 volume percent, a dielectric constant in therange of 1.5 to 3.0 and a modulus in the range of 1.0 to 10 GPa.
 22. Anelectronic substrate having an insoluble porous coating prepared by themethod of claim
 17. 23. A method of forming an insoluble porous coatingon a substrate comprising the steps of (A) coating the substrate withthe product prepared in claim 11; (B) heating the coated substrate at atemperature sufficient to effect curing of the coating composition, and(C) further heating the coated substrate to a temperature to effectremoval of any R2 groups from the cured coating composition, therebyforming an insoluble porous coating on the substrate.
 24. The method asclaimed in claim 23 wherein the curing and removal steps are done in asingle step at a temperature within the range of greater than 20° C. to600° C.
 25. An electronic substrate having an insoluble porous coatingprepared by the method of claim 23.